Next-Gen Memory From Intel closer To Reality – "Anderson Munro"

(I-Newswire) November 4, 2009 - Anderson Munro - Researchers are two steps closer to creating a mass-market version of technology called phase-change memory that could change how computers of the future are put together.

Intel and Numonyx, the chipmaker's joint venture with STMicroelectonics that's focused on flash memory, announced Wednesday they've built a new type of phase-change memory chip they hope will help fulfill the technology's promise for small size and large capacity.

First, the researchers built a grid of wires into the chip so a computer can easily control the writing of a 1 or 0 in each of the 64 million memory cells. Second, they announced their manufacturing process lets them stack several layers atop each other so memory can be packed more densely in a given volume.
Storing numbers in a computer hardly is new, so why could phase-change memory, which records ones and zeros by changing the molecular state of a particular type of glass, be a big deal?

Anderson Munro “In short, it could combine the conventional computer memory's high speed with flash memory's low cost, low power demands, and high capacity”. Having lots of fast memory on hand could simplify computer hardware and software that today must reckon with a hierarchy of storage technologies that trade off performance for capacity.

"At Intel, we see this as an important milestone in enabling a future class of memory where you can combine attributes of memory semantics and storage semantics, potentially collapsing the technologies into one memory type," said Al Fazio, Intel's director of memory technology development, discussing the technology Wednesday. "The research is very promising in delivering that."

Anderson Munro also believe that phase-change memory could get around difficulties of shrinking current memory technologies to ever-smaller sizes. And for another, it could lower the power consumption, reducing waste heat and extending battery life.

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